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| SMD Type NPN Silicon Epitaxial Transistor 2SC3360 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm High DC current gain.hFE=90 to 450 +0.1 2.4-0.1 High voltage VCEO=200V +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 200 200 5 100 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base-emitter voltage * Collector-emitter saturation voltage * Base saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Fall time * Pulse test: tp 350 is; d 0.02. Symbol ICBO IEBO hFE VBE Testconditons VCB = 200V, IE=0 VEB = 5V, IC=0 VCE =10V , IC = 10mA VCE =10V , IC = 50mA VCE =10V , IC = 10mA 90 50 0.6 200 200 0.64 0.1 0.8 160 2.8 0.15 1.3 0.3 0.7 0.3 1.2 V V V MHz pF is is is Min Typ Max 100 100 450 Unit nA nA VCE(sat) IC = 50mA , IB = 5mA VBE(sat) IC = 50mA , IB = 5mA fT Cob ton tstg tf VCE = 10V , IE = -10mA VCB = 30V , IE = 0 , f = 1.0MHz IC = 10mA, IB1 = -IB2 = 1mA, VCC = 10 V VBE(off) = -2.5V hFE Classification Marking hFE N15 90 180 N16 135 270 N17 200 450 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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